Process capability index (CPK) improvement for NMOS transistor IDSAT of 0.3 micrometer technology

• 主要作者: Goh, Beng Lee.
• 其他作者: Prasad, Krishnamachar
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/4292
• 機構: Nanyang Technological University

NLDD layer is normally considered as non-critical masking layer for 0.3?m technology. Nonetheless, it is a layer of interest in this study. This layer was first brought to attention due to wafers failing low of Idast of NMOS transistor and the problem was attributed to the marginality seen at this l...