Process capability index (CPK) improvement for NMOS transistor IDSAT of 0.3 micrometer technology

• المؤلف الرئيسي: Goh, Beng Lee.
• مؤلفون آخرون: Prasad, Krishnamachar
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4292

NLDD layer is normally considered as non-critical masking layer for 0.3?m technology. Nonetheless, it is a layer of interest in this study. This layer was first brought to attention due to wafers failing low of Idast of NMOS transistor and the problem was attributed to the marginality seen at this l...