Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used f...

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Main Authors: Phua, Poh Chin., Ong, Vincent K. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/90974
http://hdl.handle.net/10220/4650
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-909742020-03-07T14:02:40Z Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current Phua, Poh Chin. Ong, Vincent K. S. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. This method is based on the model used to calculate the contrast of a localized defect as suggested by C. Donolato and is known as the contrast model. This model can be used to precisely extract the location of the localized defect and is unaffected by the value of the surface recombination velocity at the beam entrance surface. The model of the localized defect used in this paper is characterized by minority carriers with constant lifetimes that are lower than those in the bulk. An electron beam with an extended generation profile was used in a two-dimensional (2-D) device simulator, for the verification of the theory. Published version 2009-06-23T00:47:27Z 2019-12-06T17:57:26Z 2009-06-23T00:47:27Z 2019-12-06T17:57:26Z 2002 2002 Journal Article Phua, P. C., & Ong, V. K. S. (2002). Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current. IEEE Transactions on Electron Devices, 49(11), 2036-2046. 0018-9383 https://hdl.handle.net/10356/90974 http://hdl.handle.net/10220/4650 10.1109/TED.2002.804703 en IEEE transactions on electron devices © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 11 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Phua, Poh Chin.
Ong, Vincent K. S.
Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
description This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. This method is based on the model used to calculate the contrast of a localized defect as suggested by C. Donolato and is known as the contrast model. This model can be used to precisely extract the location of the localized defect and is unaffected by the value of the surface recombination velocity at the beam entrance surface. The model of the localized defect used in this paper is characterized by minority carriers with constant lifetimes that are lower than those in the bulk. An electron beam with an extended generation profile was used in a two-dimensional (2-D) device simulator, for the verification of the theory.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Phua, Poh Chin.
Ong, Vincent K. S.
format Article
author Phua, Poh Chin.
Ong, Vincent K. S.
author_sort Phua, Poh Chin.
title Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
title_short Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
title_full Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
title_fullStr Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
title_full_unstemmed Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
title_sort determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
publishDate 2009
url https://hdl.handle.net/10356/90974
http://hdl.handle.net/10220/4650
_version_ 1681049313828929536