Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used f...

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Bibliographic Details
Main Authors: Phua, Poh Chin., Ong, Vincent K. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/90974
http://hdl.handle.net/10220/4650
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Institution: Nanyang Technological University
Language: English
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