Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

• المؤلفون الرئيسيون: Phua, Poh Chin., Ong, Vincent K. S.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90974; http://hdl.handle.net/10220/4650

This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used f...