Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

• Main Authors: Phua, Poh Chin., Ong, Vincent K. S.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/90974; http://hdl.handle.net/10220/4650
• 機構: Nanyang Technological University

This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used f...