Metallization proximity studies for copper spiral inductors on silicon
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor’s proxi...
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sg-ntu-dr.10356-910402020-03-07T13:56:09Z Metallization proximity studies for copper spiral inductors on silicon Sia, Choon Beng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor’s proximate grounded metallization on its overall inductive performance are also analyzed. Published version 2009-08-03T06:02:34Z 2019-12-06T17:58:39Z 2009-08-03T06:02:34Z 2019-12-06T17:58:39Z 2003 2003 Journal Article Sia, C. B., Yeo, K. S., Do, M. A., & Ma, J. G. (2003). Metallization proximity studies for copper spiral inductors on silicon. IEEE Transactions on Semiconductor Manufacturing, 16(2), 220-227. 0894-6507 https://hdl.handle.net/10356/91040 http://hdl.handle.net/10220/6016 10.1109/TSM.2003.811574 en IEEE transactions on semiconductor manufacturing IEEE Transactions on Semiconductor Manufacturing © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 8 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Sia, Choon Beng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo Metallization proximity studies for copper spiral inductors on silicon |
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The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance
of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor’s proximate grounded metallization on its overall inductive performance are also analyzed. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Sia, Choon Beng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo |
format |
Article |
author |
Sia, Choon Beng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo |
author_sort |
Sia, Choon Beng |
title |
Metallization proximity studies for copper spiral inductors on silicon |
title_short |
Metallization proximity studies for copper spiral inductors on silicon |
title_full |
Metallization proximity studies for copper spiral inductors on silicon |
title_fullStr |
Metallization proximity studies for copper spiral inductors on silicon |
title_full_unstemmed |
Metallization proximity studies for copper spiral inductors on silicon |
title_sort |
metallization proximity studies for copper spiral inductors on silicon |
publishDate |
2009 |
url |
https://hdl.handle.net/10356/91040 http://hdl.handle.net/10220/6016 |
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1681046111383453696 |