High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect
Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91050 http://hdl.handle.net/10220/5994 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of −46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω · cm silicon wafer of 750-μm thickness. |
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