High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect
Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen...
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sg-ntu-dr.10356-910502020-03-07T13:57:21Z High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect Guo, L. H. Zhang, Yue Ping Sun, Mei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of −46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω · cm silicon wafer of 750-μm thickness. Published version 2009-08-03T02:44:27Z 2019-12-06T17:58:49Z 2009-08-03T02:44:27Z 2019-12-06T17:58:49Z 2006 2006 Journal Article Zhang, Y. P., Guo, L. H., & Sun, M. (2006). High transmission gain inverted-F Antenna on low-resistivity Si for wireless interconnect. IEEE Electron Device Letters, 27(5), 374-376. 0741-3106 https://hdl.handle.net/10356/91050 http://hdl.handle.net/10220/5994 10.1109/LED.2006.872351 en IEEE electron device letters IEEE Electron Device Letters © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 3 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Guo, L. H. Zhang, Yue Ping Sun, Mei High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| description |
Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of −46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω · cm silicon wafer of 750-μm thickness. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Guo, L. H. Zhang, Yue Ping Sun, Mei |
| format |
Article |
| author |
Guo, L. H. Zhang, Yue Ping Sun, Mei |
| author_sort |
Guo, L. H. |
| title |
High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| title_short |
High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| title_full |
High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| title_fullStr |
High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| title_full_unstemmed |
High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
| title_sort |
high transmission gain inverted-f antenna on low-resistivity si for wireless interconnect |
| publishDate |
2009 |
| url |
https://hdl.handle.net/10356/91050 http://hdl.handle.net/10220/5994 |
| _version_ |
1681040462046035968 |