Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crys...

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Main Authors:	Ding, Liang, Chen, Tupei, Wong, Jen It, Yang, Ming, Liu, Yang, Ng, Chi Yung, Liu, Yu Chan, Tung, Chih Hang, Trigg, Alastair David, Fung, Stevenson Hon Yuen
Other Authors:	A*STAR SIMTech
Format:	Article
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:	https://hdl.handle.net/10356/91065 http://hdl.handle.net/10220/6401
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-91065
record_format	dspace
spelling	sg-ntu-dr.10356-910652020-03-07T13:57:23Z Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films Ding, Liang Chen, Tupei Wong, Jen It Yang, Ming Liu, Yang Ng, Chi Yung Liu, Yu Chan Tung, Chih Hang Trigg, Alastair David Fung, Stevenson Hon Yuen ASTAR SIMTech ASTAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si. Published version 2010-09-06T00:55:21Z 2019-12-06T17:59:05Z 2010-09-06T00:55:21Z 2019-12-06T17:59:05Z 2006 2006 Journal Article Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., et al. (2006). Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. Applied Physics Letters, 89, 1-3. 0003-6951 https://hdl.handle.net/10356/91065 http://hdl.handle.net/10220/6401 10.1063/1.2410227 en Applied physics letters Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i25/p251910_s1?isAuthorized=no 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ding, Liang Chen, Tupei Wong, Jen It Yang, Ming Liu, Yang Ng, Chi Yung Liu, Yu Chan Tung, Chih Hang Trigg, Alastair David Fung, Stevenson Hon Yuen Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
description	A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.
author2	A*STAR SIMTech
author_facet	A*STAR SIMTech Ding, Liang Chen, Tupei Wong, Jen It Yang, Ming Liu, Yang Ng, Chi Yung Liu, Yu Chan Tung, Chih Hang Trigg, Alastair David Fung, Stevenson Hon Yuen
format	Article
author	Ding, Liang Chen, Tupei Wong, Jen It Yang, Ming Liu, Yang Ng, Chi Yung Liu, Yu Chan Tung, Chih Hang Trigg, Alastair David Fung, Stevenson Hon Yuen
author_sort	Ding, Liang
title	Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
title_short	Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
title_full	Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
title_fullStr	Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
title_full_unstemmed	Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
title_sort	dielectric functions of densely stacked si nanocrystal layer embedded in sio2 thin films
publishDate	2010
url	https://hdl.handle.net/10356/91065 http://hdl.handle.net/10220/6401
_version_	1681042536134606848

Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

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