A CMOS ISFET interface circuit with dynamic current temperature compensation technique
This paper presents a new ion-sensitive field-effect transistor (ISFET ) readout circuit including a novel nonlinear temperature compensation method that is based on the theoretical work for formulating a body-effect-based ISFET drain current expression, the derivation of an unified temperature-depe...
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Main Authors: | , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2009
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/91301 http://hdl.handle.net/10220/4660 |
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Institution: | Nanyang Technological University |
Language: | English |