A CMOS ISFET interface circuit with dynamic current temperature compensation technique

This paper presents a new ion-sensitive field-effect transistor (ISFET ) readout circuit including a novel nonlinear temperature compensation method that is based on the theoretical work for formulating a body-effect-based ISFET drain current expression, the derivation of an unified temperature-depe...

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Bibliographic Details
Main Authors: Chan, Pak Kwong, Chen, D. Y.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91301
http://hdl.handle.net/10220/4660
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Institution: Nanyang Technological University
Language: English

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