Optical properties of silicon nanocrystals embedded in a SiO2 matrix
Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are foun...
محفوظ في:
المؤلفون الرئيسيون: | , , , , |
---|---|
مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2010
|
الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/91319 http://hdl.handle.net/10220/6358 |
الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
الملخص: | Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement. |
---|