Optical properties of silicon nanocrystals embedded in a SiO2 matrix
Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are foun...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91319 http://hdl.handle.net/10220/6358 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement. |
|---|