100-GHz quasi-yagi antenna in silicon technology
This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer....
محفوظ في:
المؤلفون الرئيسيون: | , |
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مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2009
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الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/91333 http://hdl.handle.net/10220/4568 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EVII&id=doi:10.1109/LED.2007.895447&genre=&isbn=&issn=07413106&date=2007&volume=28&issue=5&spage=455&epage=457&aulast=Sun&aufirst=%20Mei&auinit=&title=IEEE%20Electron%20Device%20Letters&atitle=100%2DGHz%20Quasi%2DYagi%20antenna%20in%20silicon%20technology |
الوسوم: |
إضافة وسم
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المؤسسة: | Nanyang Technological University |
اللغة: | English |
الانترنت
https://hdl.handle.net/10356/91333http://hdl.handle.net/10220/4568
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EVII&id=doi:10.1109/LED.2007.895447&genre=&isbn=&issn=07413106&date=2007&volume=28&issue=5&spage=455&epage=457&aulast=Sun&aufirst=%20Mei&auinit=&title=IEEE%20Electron%20Device%20Letters&atitle=100%2DGHz%20Quasi%2DYagi%20antenna%20in%20silicon%20technology