100-GHz quasi-yagi antenna in silicon technology
This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer....
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| Main Authors: | , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2009
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/91333 http://hdl.handle.net/10220/4568 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EVII&id=doi:10.1109/LED.2007.895447&genre=&isbn=&issn=07413106&date=2007&volume=28&issue=5&spage=455&epage=457&aulast=Sun&aufirst=%20Mei&auinit=&title=IEEE%20Electron%20Device%20Letters&atitle=100%2DGHz%20Quasi%2DYagi%20antenna%20in%20silicon%20technology |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer. Reflection measurements show a return loss of 8.2 dB at 100 GHz and a -6-dB impedance bandwidth of 89-104 GHz. Gain measurements show a gain of 5.7 dBi at 100 GHz. The simulated radiation patterns are also presented. It is anticipated that the results presented here are useful and inspiring for engineers interested in 100-GHz complementary metal-oxide-semiconductor radio front-end designs. |
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