100-GHz quasi-yagi antenna in silicon technology

This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer....

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Bibliographic Details
Main Authors: Sun, Mei, Zhang, Yue Ping
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91333
http://hdl.handle.net/10220/4568
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EVII&id=doi:10.1109/LED.2007.895447&genre=&isbn=&issn=07413106&date=2007&volume=28&issue=5&spage=455&epage=457&aulast=Sun&aufirst=%20Mei&auinit=&title=IEEE%20Electron%20Device%20Letters&atitle=100%2DGHz%20Quasi%2DYagi%20antenna%20in%20silicon%20technology
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Institution: Nanyang Technological University
Language: English

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