Sensitivity analysis of coupled interconnects for RFIC applications
This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the proc...
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sg-ntu-dr.10356-914142020-03-07T14:02:40Z Sensitivity analysis of coupled interconnects for RFIC applications Shi, Xiaomeng Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh Li, Erping School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the process parameters on transmission, reflection, near-end, and far-end crosstalk capacities of the coupled interconnects are discussed. Published version 2009-06-23T07:02:54Z 2019-12-06T18:05:14Z 2009-06-23T07:02:54Z 2019-12-06T18:05:14Z 2006 2006 Journal Article Shi, X., Yeo, K. S., Ma, J. G., Do, M. A., & Li, E. (2006). Sensitivity analysis of coupled interconnects for RFIC applications. IEEE Transactions on Electromagnetic Compatibility, 48(4), 607-613. 0018-9375 https://hdl.handle.net/10356/91414 http://hdl.handle.net/10220/4665 10.1109/TEMC.2006.884417 en IEEE transactions on electromagnetic compatibility © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 7 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Shi, Xiaomeng Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh Li, Erping Sensitivity analysis of coupled interconnects for RFIC applications |
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This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the process parameters on transmission, reflection, near-end, and far-end crosstalk capacities of the coupled interconnects are discussed. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Shi, Xiaomeng Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh Li, Erping |
format |
Article |
author |
Shi, Xiaomeng Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh Li, Erping |
author_sort |
Shi, Xiaomeng |
title |
Sensitivity analysis of coupled interconnects for RFIC applications |
title_short |
Sensitivity analysis of coupled interconnects for RFIC applications |
title_full |
Sensitivity analysis of coupled interconnects for RFIC applications |
title_fullStr |
Sensitivity analysis of coupled interconnects for RFIC applications |
title_full_unstemmed |
Sensitivity analysis of coupled interconnects for RFIC applications |
title_sort |
sensitivity analysis of coupled interconnects for rfic applications |
publishDate |
2009 |
url |
https://hdl.handle.net/10356/91414 http://hdl.handle.net/10220/4665 |
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1681033968734961664 |