Sensitivity analysis of coupled interconnects for RFIC applications

This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the proc...

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Bibliographic Details
Main Authors: Shi, Xiaomeng, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh, Li, Erping
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91414
http://hdl.handle.net/10220/4665
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Institution: Nanyang Technological University
Language: English