Scalable model of on-wafer interconnects for high-speed CMOS ICs

This paper describes the development of an equivalent circuit model of on-wafer interconnects for high-speed CMOS integrated circuits. By strategically cascading two- blocks together, the lumped model can characterize the distributed effects. Besides, the elaborately proposed model characterizes the...

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Main Authors: Shi, Xiaomeng, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh, Li, Erping
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/91415
http://hdl.handle.net/10220/4713
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-914152020-03-07T14:02:40Z Scalable model of on-wafer interconnects for high-speed CMOS ICs Shi, Xiaomeng Yeo, Kiat Seng Ma, Jianguo Do, Manh Anh Li, Erping School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper describes the development of an equivalent circuit model of on-wafer interconnects for high-speed CMOS integrated circuits. By strategically cascading two- blocks together, the lumped model can characterize the distributed effects. Besides, the elaborately proposed model characterizes the frequency-variant characteristics with frequency-independent components. Thus, the model can be easily plugged into commercial computer-aided design tools. By adopting a newly invented optimization algorithm, namely, particle swarm optimization (PSO), the model parameters are extracted and formulated as empirical expressions. Therein, with each set of the geometrical parameters, the interconnect behaviors can be accurately predicted. The accuracy of the model is validated by comparisons with the on-wafer measurements up to 30 GHz. Moreover, the scalability of the proposed model is also discussed. Published version 2009-07-28T07:01:55Z 2019-12-06T18:05:15Z 2009-07-28T07:01:55Z 2019-12-06T18:05:15Z 2006 2006 Journal Article Shi, X., Yeo, K. S., Ma, J. G., Do, M. A., & Li, E. (2006). Scalable model of on-wafer interconnects for high-speed CMOS ICs. IEEE Transactions on Advanced Packaging, 29(4), 770-776. 1521-3323 https://hdl.handle.net/10356/91415 http://hdl.handle.net/10220/4713 10.1109/TADVP.2006.884781 en IEEE transactions on advanced packaging © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Shi, Xiaomeng
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Li, Erping
Scalable model of on-wafer interconnects for high-speed CMOS ICs
description This paper describes the development of an equivalent circuit model of on-wafer interconnects for high-speed CMOS integrated circuits. By strategically cascading two- blocks together, the lumped model can characterize the distributed effects. Besides, the elaborately proposed model characterizes the frequency-variant characteristics with frequency-independent components. Thus, the model can be easily plugged into commercial computer-aided design tools. By adopting a newly invented optimization algorithm, namely, particle swarm optimization (PSO), the model parameters are extracted and formulated as empirical expressions. Therein, with each set of the geometrical parameters, the interconnect behaviors can be accurately predicted. The accuracy of the model is validated by comparisons with the on-wafer measurements up to 30 GHz. Moreover, the scalability of the proposed model is also discussed.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Shi, Xiaomeng
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Li, Erping
format Article
author Shi, Xiaomeng
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Li, Erping
author_sort Shi, Xiaomeng
title Scalable model of on-wafer interconnects for high-speed CMOS ICs
title_short Scalable model of on-wafer interconnects for high-speed CMOS ICs
title_full Scalable model of on-wafer interconnects for high-speed CMOS ICs
title_fullStr Scalable model of on-wafer interconnects for high-speed CMOS ICs
title_full_unstemmed Scalable model of on-wafer interconnects for high-speed CMOS ICs
title_sort scalable model of on-wafer interconnects for high-speed cmos ics
publishDate 2009
url https://hdl.handle.net/10356/91415
http://hdl.handle.net/10220/4713
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