Comparative study of non-standard power diodes
Various non-standard power diode structures have been proposed which are superior in performance in comparison to the standard power diode. However, each of these structures help optimize certain electrical parameters with corresponding trade-offs for others. In this work, the electrical parameters...
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sg-ntu-dr.10356-916012020-03-07T13:24:46Z Comparative study of non-standard power diodes Tan, Cher Ming Raghavan, Nagarajan Sun, Lina Hsu, Chuck Wang, Chase School of Electrical and Electronic Engineering IEEE Conference on Industrial Electronics and Applications (4th : 2009 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering Various non-standard power diode structures have been proposed which are superior in performance in comparison to the standard power diode. However, each of these structures help optimize certain electrical parameters with corresponding trade-offs for others. In this work, the electrical parameters of three non-standard diode structures viz. SPEED diode, BUFFER diode and CLC (Carrier Lifetime Control) diode are evaluated in comparison to those of the conventional P+NN+ standard diode. A Design of Experiment (DOE) combined with extensive MEDICI simulation is performed, followed by Response Surface Methodology (RSM) to empirically relate the electrical parameters with the diode structural and doping parameters. A global optimization algorithm, known as Simulated Annealing (SA) is used to optimize each individual electrical parameter. Sensitivity analysis for the mized electrical parameter is also performed to study the effects of inherent process variations on the device electrical parameters, indicating the manufacturability of the non-standard power diodes. Published version 2010-06-04T07:08:55Z 2019-12-06T18:08:42Z 2010-06-04T07:08:55Z 2019-12-06T18:08:42Z 2009 2009 Conference Paper Tan, C. M., Raghavan, N., Sun, L., Hsu, C., & Wang, C. (2009). Comparative study of non-standard power diodes. IEEE Conference on Industrial Electronics and Applications (4th:2009:Xian,China) https://hdl.handle.net/10356/91601 http://hdl.handle.net/10220/6291 10.1109/ICIEA.2009.5138815 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 8 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Tan, Cher Ming Raghavan, Nagarajan Sun, Lina Hsu, Chuck Wang, Chase Comparative study of non-standard power diodes |
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Various non-standard power diode structures have been proposed which are superior in performance in comparison to the standard power diode. However, each of these structures help optimize certain electrical parameters with corresponding trade-offs for others. In this work, the electrical parameters of three non-standard diode structures viz. SPEED diode, BUFFER diode and CLC (Carrier Lifetime Control) diode are evaluated in comparison to those of the conventional P+NN+ standard diode. A Design of Experiment (DOE) combined with extensive MEDICI simulation is performed, followed by Response Surface Methodology (RSM) to empirically relate the electrical parameters with the diode structural and doping parameters. A
global optimization algorithm, known as Simulated Annealing (SA) is used to optimize each individual electrical parameter. Sensitivity analysis for the mized electrical parameter is also performed to study the effects of inherent process variations on
the device electrical parameters, indicating the manufacturability
of the non-standard power diodes. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Tan, Cher Ming Raghavan, Nagarajan Sun, Lina Hsu, Chuck Wang, Chase |
format |
Conference or Workshop Item |
author |
Tan, Cher Ming Raghavan, Nagarajan Sun, Lina Hsu, Chuck Wang, Chase |
author_sort |
Tan, Cher Ming |
title |
Comparative study of non-standard power diodes |
title_short |
Comparative study of non-standard power diodes |
title_full |
Comparative study of non-standard power diodes |
title_fullStr |
Comparative study of non-standard power diodes |
title_full_unstemmed |
Comparative study of non-standard power diodes |
title_sort |
comparative study of non-standard power diodes |
publishDate |
2010 |
url |
https://hdl.handle.net/10356/91601 http://hdl.handle.net/10220/6291 |
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1681044065212170240 |