Quantum well intermixing in GaInNAs/GaAs structures

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to t...

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Main Authors: Sun, Handong, Macaluso, Roberto, Calvez, Stephane, Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., Gilet, P., Grenouillet, L., Million, A., Nam, K. B., Lin, J. Y., Jiang, H. X.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/91816
http://hdl.handle.net/10220/6062
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici.
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-918162023-02-28T19:31:43Z Quantum well intermixing in GaInNAs/GaAs structures Sun, Handong Macaluso, Roberto Calvez, Stephane Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Gilet, P. Grenouillet, L. Million, A. Nam, K. B. Lin, J. Y. Jiang, H. X. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. Published version 2009-08-12T03:48:08Z 2019-12-06T18:12:24Z 2009-08-12T03:48:08Z 2019-12-06T18:12:24Z 2003 2003 Journal Article Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. 0021-8979 https://hdl.handle.net/10356/91816 http://hdl.handle.net/10220/6062 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. 10.1063/1.1627950 en Journal of Applied Physics. Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Science::Physics::Optics and light
spellingShingle DRNTU::Science::Physics::Optics and light
Sun, Handong
Macaluso, Roberto
Calvez, Stephane
Dawson, M. D.
Robert, F.
Bryce, A. C.
Marsh, J. H.
Gilet, P.
Grenouillet, L.
Million, A.
Nam, K. B.
Lin, J. Y.
Jiang, H. X.
Quantum well intermixing in GaInNAs/GaAs structures
description We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Sun, Handong
Macaluso, Roberto
Calvez, Stephane
Dawson, M. D.
Robert, F.
Bryce, A. C.
Marsh, J. H.
Gilet, P.
Grenouillet, L.
Million, A.
Nam, K. B.
Lin, J. Y.
Jiang, H. X.
format Article
author Sun, Handong
Macaluso, Roberto
Calvez, Stephane
Dawson, M. D.
Robert, F.
Bryce, A. C.
Marsh, J. H.
Gilet, P.
Grenouillet, L.
Million, A.
Nam, K. B.
Lin, J. Y.
Jiang, H. X.
author_sort Sun, Handong
title Quantum well intermixing in GaInNAs/GaAs structures
title_short Quantum well intermixing in GaInNAs/GaAs structures
title_full Quantum well intermixing in GaInNAs/GaAs structures
title_fullStr Quantum well intermixing in GaInNAs/GaAs structures
title_full_unstemmed Quantum well intermixing in GaInNAs/GaAs structures
title_sort quantum well intermixing in gainnas/gaas structures
publishDate 2009
url https://hdl.handle.net/10356/91816
http://hdl.handle.net/10220/6062
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici.
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