Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

• المؤلفون الرئيسيون: Fu, Yong Qing, Liu, Yang, Chen, Tupei, Ding, Liang, Zhang, Sam, Fung, Stevenson Hon Yuen
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering; DRNTU::Engineering::Mechanical engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91838; http://hdl.handle.net/10220/6404

One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this wor...