Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems

• Main Authors: Fan, Wei Jun, Bose, Sumanta, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Optical lattices; Electronic bandstructure
• Online Access: https://hdl.handle.net/10356/93149; http://hdl.handle.net/10220/42279
• Institution: Nanyang Technological University

Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 μm optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbi...