Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ
We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped 123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the i...
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| Main Authors: | , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/93915 http://hdl.handle.net/10220/6929 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site
potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped
123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the increase of the trivalent rare-earth ionic
radius rR3+. This change enhances the next-nearest-neighbor hopping integral t', which results in the experimentally
observed increase of Tc with rR3+. The coherent interlayer single-particle hopping t⊥ has a more
profound effect than t' on the nearly linear trend of Tc as a function of rR3+. These results reveal the importance
of the electronic origin of the rare-earth ionic size effect on Tc in this family. |
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