Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical me...

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Bibliographic Details
Main Authors: Zhang, T., Darmawan, P., Setiawan, Y., Seng, H. L., Chan, T. K., Osipowicz, T., Chan, Mei Yin, Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/94047
http://hdl.handle.net/10220/8038
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Institution: Nanyang Technological University
Language: English