Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

• Main Authors: Zhang, T., Darmawan, P., Setiawan, Y., Seng, H. L., Chan, T. K., Osipowicz, T., Chan, Mei Yin, Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/94047; http://hdl.handle.net/10220/8038
• Institution: Nanyang Technological University

Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current.