Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical me...
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| المؤلفون الرئيسيون: | , , , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2012
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/94047 http://hdl.handle.net/10220/8038 |
| الوسوم: |
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| الملخص: | Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge
signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an
improvement of the k value with annealing temperature, as well as an increasing trend in the leakage
current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical
performance of the device due to the increased leakage current. |
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