Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical me...
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| Main Authors: | , , , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/94047 http://hdl.handle.net/10220/8038 |
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| 總結: | Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge
signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an
improvement of the k value with annealing temperature, as well as an increasing trend in the leakage
current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical
performance of the device due to the increased leakage current. |
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