Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical me...
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| Main Authors: | , , , , , , , |
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| 格式: | Article |
| 語言: | English |
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2012
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| 在線閱讀: | https://hdl.handle.net/10356/94047 http://hdl.handle.net/10220/8038 |
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