Nanolithography of single-layer graphene oxide films by atomic force microscopy

Nanolithography of single-layer graphene oxide films by atomic force microscopy

Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO2 substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squa...

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Bibliographic Details
Main Authors: Lu, Gang, Zhou, Xiaozhu, Li, Hai, Yin, Zongyou, Li, Bing, Huang, Ling, Boey, Freddy Yin Chiang, Zhang, Hua
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/94306
http://hdl.handle.net/10220/8603
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Institution: Nanyang Technological University
Language: English
Description
Summary:Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO2 substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications.

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