Nanolithography of single-layer graphene oxide films by atomic force microscopy

Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO2 substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squa...

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Main Authors: Lu, Gang, Zhou, Xiaozhu, Li, Hai, Yin, Zongyou, Li, Bing, Huang, Ling, Boey, Freddy Yin Chiang, Zhang, Hua
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/94306
http://hdl.handle.net/10220/8603
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-943062020-06-01T10:21:09Z Nanolithography of single-layer graphene oxide films by atomic force microscopy Lu, Gang Zhou, Xiaozhu Li, Hai Yin, Zongyou Li, Bing Huang, Ling Boey, Freddy Yin Chiang Zhang, Hua School of Materials Science & Engineering DRNTU::Engineering::Materials Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO2 substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications. 2012-09-24T00:51:29Z 2019-12-06T18:53:53Z 2012-09-24T00:51:29Z 2019-12-06T18:53:53Z 2010 2010 Journal Article Lu, G., Zhou, X., Li, H., Yin, Z., Li, B., Huang, L., et al. (2010). Nanolithography of single-layer graphene oxide films by atomic force microscopy. Langmuir, 26(9), 6164-6166. 0743-7463 https://hdl.handle.net/10356/94306 http://hdl.handle.net/10220/8603 10.1021/la101077t en Langmuir © 2010 American Chemical Society.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Lu, Gang
Zhou, Xiaozhu
Li, Hai
Yin, Zongyou
Li, Bing
Huang, Ling
Boey, Freddy Yin Chiang
Zhang, Hua
Nanolithography of single-layer graphene oxide films by atomic force microscopy
description Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO2 substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Lu, Gang
Zhou, Xiaozhu
Li, Hai
Yin, Zongyou
Li, Bing
Huang, Ling
Boey, Freddy Yin Chiang
Zhang, Hua
format Article
author Lu, Gang
Zhou, Xiaozhu
Li, Hai
Yin, Zongyou
Li, Bing
Huang, Ling
Boey, Freddy Yin Chiang
Zhang, Hua
author_sort Lu, Gang
title Nanolithography of single-layer graphene oxide films by atomic force microscopy
title_short Nanolithography of single-layer graphene oxide films by atomic force microscopy
title_full Nanolithography of single-layer graphene oxide films by atomic force microscopy
title_fullStr Nanolithography of single-layer graphene oxide films by atomic force microscopy
title_full_unstemmed Nanolithography of single-layer graphene oxide films by atomic force microscopy
title_sort nanolithography of single-layer graphene oxide films by atomic force microscopy
publishDate 2012
url https://hdl.handle.net/10356/94306
http://hdl.handle.net/10220/8603
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