LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be abou...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94586 http://hdl.handle.net/10220/8096 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be about 6 nm and 1.1 x 10^12 cm−2, respectively. Superior performances in terms of a large
memory window, long data retention, and robust endurance were observed. |
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