LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

• Main Authors: Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Nanostructured materials
• Online Access: https://hdl.handle.net/10356/94586; http://hdl.handle.net/10220/8096
• Institution: Nanyang Technological University

A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be abou...