Anomalous polarization switching in organic ferroelectric field effect transistors

The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain...

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Main Authors: Nguyen, Chien A., Lee, Pooi See, Ng, Nathaniel, Su, Haibin, Mhaisalkar, Subodh Gautam, Ma, Jan, Boey, Freddy Yin Chiang
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/95006
http://hdl.handle.net/10220/8008
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-950062023-07-14T15:56:47Z Anomalous polarization switching in organic ferroelectric field effect transistors Nguyen, Chien A. Lee, Pooi See Ng, Nathaniel Su, Haibin Mhaisalkar, Subodh Gautam Ma, Jan Boey, Freddy Yin Chiang School of Materials Science & Engineering DRNTU::Engineering::Materials The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors. Published version 2012-05-16T04:49:37Z 2019-12-06T19:06:21Z 2012-05-16T04:49:37Z 2019-12-06T19:06:21Z 2007 2007 Journal Article Nguyen, C. A., Lee, P. S., Ng, N., Su, H., Mhaisalkar, S. G., Ma, J., et al. (2007). Anomalous polarization switching in organic ferroelectric field effect transistors. Applied physics letters, 91(4). https://hdl.handle.net/10356/95006 http://hdl.handle.net/10220/8008 10.1063/1.2757092 en Applied physics letters © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2757092. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Nguyen, Chien A.
Lee, Pooi See
Ng, Nathaniel
Su, Haibin
Mhaisalkar, Subodh Gautam
Ma, Jan
Boey, Freddy Yin Chiang
Anomalous polarization switching in organic ferroelectric field effect transistors
description The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Nguyen, Chien A.
Lee, Pooi See
Ng, Nathaniel
Su, Haibin
Mhaisalkar, Subodh Gautam
Ma, Jan
Boey, Freddy Yin Chiang
format Article
author Nguyen, Chien A.
Lee, Pooi See
Ng, Nathaniel
Su, Haibin
Mhaisalkar, Subodh Gautam
Ma, Jan
Boey, Freddy Yin Chiang
author_sort Nguyen, Chien A.
title Anomalous polarization switching in organic ferroelectric field effect transistors
title_short Anomalous polarization switching in organic ferroelectric field effect transistors
title_full Anomalous polarization switching in organic ferroelectric field effect transistors
title_fullStr Anomalous polarization switching in organic ferroelectric field effect transistors
title_full_unstemmed Anomalous polarization switching in organic ferroelectric field effect transistors
title_sort anomalous polarization switching in organic ferroelectric field effect transistors
publishDate 2012
url https://hdl.handle.net/10356/95006
http://hdl.handle.net/10220/8008
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