Anomalous polarization switching in organic ferroelectric field effect transistors

• Main Authors: Nguyen, Chien A., Lee, Pooi See, Ng, Nathaniel, Su, Haibin, Mhaisalkar, Subodh Gautam, Ma, Jan, Boey, Freddy Yin Chiang
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95006; http://hdl.handle.net/10220/8008
• Institution: Nanyang Technological University

The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.