Anomalous polarization switching in organic ferroelectric field effect transistors

The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain...

Full description

Saved in:
Bibliographic Details
Main Authors: Nguyen, Chien A., Lee, Pooi See, Ng, Nathaniel, Su, Haibin, Mhaisalkar, Subodh Gautam, Ma, Jan, Boey, Freddy Yin Chiang
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/95006
http://hdl.handle.net/10220/8008
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.