Anomalous polarization switching in organic ferroelectric field effect transistors
The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain...
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| Main Authors: | , , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/95006 http://hdl.handle.net/10220/8008 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene
fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain
current hysteresis is resulted from the dipole switching at channel region due to gate-source bias.
For common gate device, an additional anomalous polarization switching is observed due to
gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in
the off drain current leading to unstable and uncontrollable off state in memory device. Reduction
of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching
hence improves performance of the ferroelectric transistors. |
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