Fracture toughness of Cu-Sn intermetallic thin films
Intermetallic compounds (IMCs) are formed as a result of interaction between solder and metallization to form joints in electronic packaging. These joints provide mechanical and electrical contacts between components. The knowledge of fracture strength of the IMCs will facilitate predicting the over...
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/95014 http://hdl.handle.net/10220/8207 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-95014 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-950142023-07-14T15:53:33Z Fracture toughness of Cu-Sn intermetallic thin films Li, M. Chen, Z. Balakrisnan, Bavani Chum, Chan Choy Cahyadi, Tommy School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Intermetallic compounds (IMCs) are formed as a result of interaction between solder and metallization to form joints in electronic packaging. These joints provide mechanical and electrical contacts between components. The knowledge of fracture strength of the IMCs will facilitate predicting the overall joint property, as it is more disposed to failure at the joint compared to the solder because of its brittle characteristics. The salient feature of this paper is the measurement of the fracture toughness and the critical energy-release rate of Cu3Sn and Cu6Sn5 intermetallic thin films, which is the result of the interaction between Sn from the solder and Cu from the metallization. To achieve the objective, a controlled buckling test was used. A buckling test in the current work refers to one that displays large transverse displacement caused by axial compressive loading on a slender beam. The stress and strain along the beam can be easily calculated by the applied displacement. Fracture-toughness values of Cu3Sn and Cu6Sn5 are 2.85 MPa √m ± 0.17 MPa √m and 2.36 MPa √m ± 0.15 MPa √m, respectively. Corresponding critical energy-release rate values are 65.5 J/m2 ± 8.0 J/m2 and 55.9 J/m2 ± 7.3 J/m2, respectively. The values obtained were much higher than the ones measured in bulk intermetallic samples but correlated well with those values obtained from conventional fracture-toughness specimens when fracture was confined within the intermetallic layers. Hence, the controlled buckling test is a promising fast and effective way to elucidate mechanical properties of thin films. Accepted version 2012-06-19T08:22:21Z 2019-12-06T19:06:30Z 2012-06-19T08:22:21Z 2019-12-06T19:06:30Z 2002 2002 Journal Article Balakrisnan, B., Chum, C. C., Li, M., Chen, Z., & Cahyadi, T. (2003). Fracture toughness of Cu-Sn intermetallic thin films. Journal of electronic materials, 32(3), 166-171. https://hdl.handle.net/10356/95014 http://hdl.handle.net/10220/8207 10.1007/s11664-003-0188-x en Journal of electronic materials © 2002 Springer. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Electronic Materials, Springer. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1007/s11664-003-0188-x ]. 19 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
spellingShingle |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Li, M. Chen, Z. Balakrisnan, Bavani Chum, Chan Choy Cahyadi, Tommy Fracture toughness of Cu-Sn intermetallic thin films |
description |
Intermetallic compounds (IMCs) are formed as a result of interaction between solder and metallization to form joints in electronic packaging. These joints provide mechanical and electrical contacts between components. The knowledge of fracture strength of the IMCs will facilitate predicting the overall joint property, as it is more disposed to failure at the joint compared to the solder because of its brittle characteristics. The salient feature of this paper is the measurement of the fracture toughness and the critical energy-release rate of Cu3Sn and Cu6Sn5 intermetallic thin films, which is the result of the interaction between Sn from the solder and Cu from the metallization. To achieve the objective, a controlled buckling test was used. A buckling test in the current work refers to one that displays large transverse displacement caused by axial compressive loading on a slender beam. The stress and strain along the beam can be easily calculated by the applied displacement. Fracture-toughness values of Cu3Sn and Cu6Sn5 are 2.85 MPa √m ± 0.17 MPa √m and 2.36 MPa √m ± 0.15 MPa √m, respectively. Corresponding critical energy-release rate values are 65.5 J/m2 ± 8.0 J/m2 and 55.9 J/m2 ± 7.3 J/m2, respectively. The values obtained were much higher than the ones measured in bulk intermetallic samples but correlated well with those values obtained from conventional fracture-toughness specimens when fracture was confined within the intermetallic layers. Hence, the controlled buckling test is a promising fast and effective way to elucidate mechanical properties of thin films. |
author2 |
School of Materials Science & Engineering |
author_facet |
School of Materials Science & Engineering Li, M. Chen, Z. Balakrisnan, Bavani Chum, Chan Choy Cahyadi, Tommy |
format |
Article |
author |
Li, M. Chen, Z. Balakrisnan, Bavani Chum, Chan Choy Cahyadi, Tommy |
author_sort |
Li, M. |
title |
Fracture toughness of Cu-Sn intermetallic thin films |
title_short |
Fracture toughness of Cu-Sn intermetallic thin films |
title_full |
Fracture toughness of Cu-Sn intermetallic thin films |
title_fullStr |
Fracture toughness of Cu-Sn intermetallic thin films |
title_full_unstemmed |
Fracture toughness of Cu-Sn intermetallic thin films |
title_sort |
fracture toughness of cu-sn intermetallic thin films |
publishDate |
2012 |
url |
https://hdl.handle.net/10356/95014 http://hdl.handle.net/10220/8207 |
_version_ |
1772825487745220608 |