Effect of ion implantation on layer inversion of Ni silicided poly-Si

Effect of ion implantation on layer inversion of Ni silicided poly-Si

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded l...

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Bibliographic Details
Main Authors: Mangelinck, D., Osipowicz, T., Dai, J. Y., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:https://hdl.handle.net/10356/95017
http://hdl.handle.net/10220/8104
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Institution: Nanyang Technological University
Language: English
Description
Summary:The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.

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