Effect of ion implantation on layer inversion of Ni silicided poly-Si

• Main Authors: Mangelinck, D., Osipowicz, T., Dai, J. Y., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/95017; http://hdl.handle.net/10220/8104
• Institution: Nanyang Technological University

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded l...