Effect of ion implantation on layer inversion of Ni silicided poly-Si

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded l...

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Main Authors:	Mangelinck, D., Osipowicz, T., Dai, J. Y., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	https://hdl.handle.net/10356/95017 http://hdl.handle.net/10220/8104
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-95017
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spelling	sg-ntu-dr.10356-950172023-07-14T15:57:32Z Effect of ion implantation on layer inversion of Ni silicided poly-Si Mangelinck, D. Osipowicz, T. Dai, J. Y. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation. Published version 2012-05-18T07:59:54Z 2019-12-06T19:06:35Z 2012-05-18T07:59:54Z 2019-12-06T19:06:35Z 2002 2002 Journal Article Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Chi, D. Z, Osipowicz, T., et al. (2002). Effect of ion implantation on layer inversion of Ni silicided poly-Si. Journal of The Electrochemical Society, 149(9), G505-G509. https://hdl.handle.net/10356/95017 http://hdl.handle.net/10220/8104 10.1149/1.1494828 en Journal of the electrochemical society © 2002 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1494828. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Mangelinck, D. Osipowicz, T. Dai, J. Y. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi Effect of ion implantation on layer inversion of Ni silicided poly-Si
description	The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Mangelinck, D. Osipowicz, T. Dai, J. Y. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi
format	Article
author	Mangelinck, D. Osipowicz, T. Dai, J. Y. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi
author_sort	Mangelinck, D.
title	Effect of ion implantation on layer inversion of Ni silicided poly-Si
title_short	Effect of ion implantation on layer inversion of Ni silicided poly-Si
title_full	Effect of ion implantation on layer inversion of Ni silicided poly-Si
title_fullStr	Effect of ion implantation on layer inversion of Ni silicided poly-Si
title_full_unstemmed	Effect of ion implantation on layer inversion of Ni silicided poly-Si
title_sort	effect of ion implantation on layer inversion of ni silicided poly-si
publishDate	2012
url	https://hdl.handle.net/10356/95017 http://hdl.handle.net/10220/8104
_version_	1773551352516968448

Effect of ion implantation on layer inversion of Ni silicided poly-Si

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