Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic che...

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Main Authors: Dalapati, Goutam Kumar, Wong, Terence Kin Shun, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/95231
http://hdl.handle.net/10220/9334
http://www.nanoscalereslett.com/content/7/1/99
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-952312019-12-06T19:10:53Z Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping Dalapati, Goutam Kumar Wong, Terence Kin Shun Li, Yang Chia, Ching Kean Das, Anindita Mahata, Chandreswar Gao, Han Chattopadhyay, Sanatan Kumar, Manippady Krishna Seng, Hwee Leng Maiti, Chinmay Kumar Chi, Dong Zhi School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). Published version 2013-03-05T02:47:24Z 2019-12-06T19:10:53Z 2013-03-05T02:47:24Z 2019-12-06T19:10:53Z 2012 2012 Journal Article Dalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7. https://hdl.handle.net/10356/95231 http://hdl.handle.net/10220/9334 http://www.nanoscalereslett.com/content/7/1/99 en Nanoscale research letters © 2012 The Authors. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Dalapati, Goutam Kumar
Wong, Terence Kin Shun
Li, Yang
Chia, Ching Kean
Das, Anindita
Mahata, Chandreswar
Gao, Han
Chattopadhyay, Sanatan
Kumar, Manippady Krishna
Seng, Hwee Leng
Maiti, Chinmay Kumar
Chi, Dong Zhi
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
description Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Dalapati, Goutam Kumar
Wong, Terence Kin Shun
Li, Yang
Chia, Ching Kean
Das, Anindita
Mahata, Chandreswar
Gao, Han
Chattopadhyay, Sanatan
Kumar, Manippady Krishna
Seng, Hwee Leng
Maiti, Chinmay Kumar
Chi, Dong Zhi
format Article
author Dalapati, Goutam Kumar
Wong, Terence Kin Shun
Li, Yang
Chia, Ching Kean
Das, Anindita
Mahata, Chandreswar
Gao, Han
Chattopadhyay, Sanatan
Kumar, Manippady Krishna
Seng, Hwee Leng
Maiti, Chinmay Kumar
Chi, Dong Zhi
author_sort Dalapati, Goutam Kumar
title Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
title_short Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
title_full Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
title_fullStr Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
title_full_unstemmed Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
title_sort characterization of epitaxial gaas mos capacitors using atomic layer-deposited tio2/al2o3 gate stack : study of ge auto-doping and p-type zn doping
publishDate 2013
url https://hdl.handle.net/10356/95231
http://hdl.handle.net/10220/9334
http://www.nanoscalereslett.com/content/7/1/99
_version_ 1681038600662155264