Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric

10.1038/srep40669

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Bibliographic Details
Main Authors: Xia, P, Feng, X, Ng, R.J, Wang, S, Chi, D, Li, C, He, Z, Liu, X, Ang, K.-W
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/173950
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/173950

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