Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric
10.1038/srep40669
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Main Authors: | Xia, P, Feng, X, Ng, R.J, Wang, S, Chi, D, Li, C, He, Z, Liu, X, Ang, K.-W |
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Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Article |
Published: |
2020
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Online Access: | https://scholarbank.nus.edu.sg/handle/10635/173950 |
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Institution: | National University of Singapore |
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