Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric

10.1038/srep40669

Saved in:
Bibliographic Details
Main Authors: Xia, P, Feng, X, Ng, R.J, Wang, S, Chi, D, Li, C, He, Z, Liu, X, Ang, K.-W
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/173950
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items