Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping

• Main Authors: Dalapati, Goutam Kumar, Wong, Terence Kin Shun, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/95231; http://hdl.handle.net/10220/9334; http://www.nanoscalereslett.com/content/7/1/99
• Institution: Nanyang Technological University

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic che...