Crystallization and surface texturing of amorphous-Si induced by UV laser for photovoltaic application
The DPSS Nd:YVO4 UV laser is used to anneal amorphous silicon (a-Si) film to achieve crystallization and nano-dome surface texturing simultaneously in a one-step annealing process. With pulse energy of 380 mJ/cm2 and repetition rate of 20 kHz, the a-Si can be crystallized by the sequential lateral s...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95246 http://hdl.handle.net/10220/9132 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The DPSS Nd:YVO4 UV laser is used to anneal amorphous silicon (a-Si) film to achieve crystallization and nano-dome surface texturing simultaneously in a one-step annealing process. With pulse energy of 380 mJ/cm2 and repetition rate of 20 kHz, the a-Si can be crystallized by the sequential lateral solidification process, which is evidenced by both SEM characterization and Raman spectra. In addition, the nano-dome like structure is confirmed by AFM characterization, which can lead to ∼200% boost in terms of light absorption as measured by UV-Visible - Near-infrared scanning spectrophotometer. This study highlights the great potential of Nd:YVO4 UV laser for its application in thin film Si solar cell industry to improve the film quality and light trapping capability. |
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