Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices

• المؤلفون الرئيسيون: Shang, Yang, Fei, Wei, Yu, Hao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95525; http://hdl.handle.net/10220/8762

Hybrid integration of CMOS and nonvolatile memory (NVM) devices has become the foundation for emerging nonvolatile memory-based computing. The primary challenge to validate hybrid memory system with both CMOS and NVM devices is to develop a SPICE-like simulator that can simulate the dynamic behavior...