Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices

Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices

Hybrid integration of CMOS and nonvolatile memory (NVM) devices has become the foundation for emerging nonvolatile memory-based computing. The primary challenge to validate hybrid memory system with both CMOS and NVM devices is to develop a SPICE-like simulator that can simulate the dynamic behavior...

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書目詳細資料
Main Authors:	Shang, Yang, Fei, Wei, Yu, Hao
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/95525 http://hdl.handle.net/10220/8762
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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