Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory

• Main Authors: Liu, Houfang, Lu, Tianqi, Li, Yuxing, Ju, Zhenyi, Zhao, Ruiting, Li, Jingzhou, Shao, Minghao, Zhang, Hainan, Liang, Renrong, Wang, Renshaw Xiao, Guo, Rui, Chen, Jingsheng, Yang, Yi, Ren, Tian-Ling
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Ferroelectric Materials; Flexible Electronics
• Online Access: https://hdl.handle.net/10356/145564
• Institution: Nanyang Technological University

Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain g...