Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory

Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain g...

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Bibliographic Details
Main Authors: Liu, Houfang, Lu, Tianqi, Li, Yuxing, Ju, Zhenyi, Zhao, Ruiting, Li, Jingzhou, Shao, Minghao, Zhang, Hainan, Liang, Renrong, Wang, Renshaw Xiao, Guo, Rui, Chen, Jingsheng, Yang, Yi, Ren, Tian-Ling
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/145564
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Institution: Nanyang Technological University
Language: English

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