Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory
Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain g...
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sg-ntu-dr.10356-1455642023-02-28T19:38:24Z Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory Liu, Houfang Lu, Tianqi Li, Yuxing Ju, Zhenyi Zhao, Ruiting Li, Jingzhou Shao, Minghao Zhang, Hainan Liang, Renrong Wang, Renshaw Xiao Guo, Rui Chen, Jingsheng Yang, Yi Ren, Tian-Ling School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Ferroelectric Materials Flexible Electronics Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability. Ministry of Education (MOE) Nanyang Technological University National Research Foundation (NRF) Published version This work was supported by the National Key R&D Program (2016YFA0200400) and National Natural Science Foundation (61434001, 61574083, 61874065, and 51861145202). The authors are also thankful for the support of the Research Fund from Beijing Innovation Center for Future Chip, Beijing Natural Science Foundation (4184091), Shenzhen Science and Technology Program (JCYJ20150831192224146), and Open Research Fund Program of the State Key Laboratory of Low‐Dimensional Quantum Physics (KF201715). The authors are also thankful for the support of Foshan‐Tsinghua Innovation Special Fund (2018THFS0411 and 2018THFS0415). X.R.W. acknowledges supports from the Nanyang Assistant Professorship grant from Nanyang Technological University, Academic Research Fund Tier 1 (Grant No. RG177/18) from Singapore Ministry of Education, and the Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant No. NRF‐CRP21‐2018‐0003). The authors thank Caihua Wan from Institute of Physics, University of Chinese Academy of Science for insightful discussions about the paper. 2020-12-28T09:10:44Z 2020-12-28T09:10:44Z 2020 Journal Article Liu, H., Lu, T., Li, Y., Ju, Z., Zhao, R., Li, J., . . . Ren, T.-L. (2020). Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory. Advanced Science, 7(19), 2001266-. doi:10.1002/advs.202001266 2198-3844 https://hdl.handle.net/10356/145564 10.1002/advs.202001266 33042746 19 7 en RG177/18 NRF‐CRP21‐2018‐0003 Advanced Science © 2020 The Authors. Published by Wiley‐VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf |
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Engineering::Electrical and electronic engineering Ferroelectric Materials Flexible Electronics Liu, Houfang Lu, Tianqi Li, Yuxing Ju, Zhenyi Zhao, Ruiting Li, Jingzhou Shao, Minghao Zhang, Hainan Liang, Renrong Wang, Renshaw Xiao Guo, Rui Chen, Jingsheng Yang, Yi Ren, Tian-Ling Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
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Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability. |
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School of Physical and Mathematical Sciences |
author_facet |
School of Physical and Mathematical Sciences Liu, Houfang Lu, Tianqi Li, Yuxing Ju, Zhenyi Zhao, Ruiting Li, Jingzhou Shao, Minghao Zhang, Hainan Liang, Renrong Wang, Renshaw Xiao Guo, Rui Chen, Jingsheng Yang, Yi Ren, Tian-Ling |
format |
Article |
author |
Liu, Houfang Lu, Tianqi Li, Yuxing Ju, Zhenyi Zhao, Ruiting Li, Jingzhou Shao, Minghao Zhang, Hainan Liang, Renrong Wang, Renshaw Xiao Guo, Rui Chen, Jingsheng Yang, Yi Ren, Tian-Ling |
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Liu, Houfang |
title |
Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
title_short |
Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
title_full |
Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
title_fullStr |
Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
title_full_unstemmed |
Flexible quasi‐van der Waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
title_sort |
flexible quasi‐van der waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/145564 |
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1759853048101863424 |