Characterization of novel memory devices based on nanostructured materials

An Al-rich Al2O3 thin film was deposited on a p-tpye silicon substrate by radio frequency sputtering to form Al/Al-rich Al2O3/p-Si MIS diode. The current-voltage(C-V) characteristics of the diodes were determined by carrier injection from either the silicon substrate or the Al gate and by carrier tr...

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Bibliographic Details
Main Author: Win, Aye Sandar.
Other Authors: Chen Tupei
Format: Final Year Project
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/49717
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Institution: Nanyang Technological University
Language: English